FETek Technology Corp.
FKBA6032
N-Ch 60V Fast Switching MOSFETs
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Product Summary
BVDSS 60V
RDSON 8.5mΩ
ID 75A
Description
PRPAK5X6 Pin Configuration
The FKBA6032 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA6032 meet the RoHS .
N-Channel MOSFET
FETek Technology Corp.
FKBA6032
N-Ch 60V Fast Switching MOSFETs
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Product Summary
BVDSS 60V
RDSON 8.5mΩ
ID 75A
Description
PRPAK5X6 Pin Configuration
The FKBA6032 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBA6032 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Thermal Data.