FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKBB2627 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB2627 meet the RoHS and Green Product requirement with full function reliability approved.
FKBB2627
P-Ch 20V Fast Switching MOSFETs
Product Summary
BVDSS -20V
RD.
P-Channel MOSFET
FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKBB2627 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB2627 meet the RoHS and Green Product requirement with full function reliability approved.
FKBB2627
P-Ch 20V Fast Switching MOSFETs
Product Summary
BVDSS -20V
RDSON 9mΩ
ID -48A
PRPAK3x3 Pin Configuration
Absolute Maximum Ratings
Symbol
VDS VGS ID@TC=25℃ ID@TC=70℃ IDM PD@TC=25℃ PD@TC=70℃ TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Rating
-20 ±8 -48 -38 -100 29 19 -55 to 150 -55 to 150
Units
V V A A A W W .