FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect ...
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKBB3103 is the high cell density trenched P-ch
MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKBB3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKBB3103
P-Ch 30V Fast Switching
MOSFETs Product Summary
BVDSS -30V
RDSON 20mΩ
ID -32A
PRPAK3X3 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG
TJ
Thermal Data
Symbol RθJA RθJA RθJC
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 S...
