FKD3018

FETek Technology Corp.  100% EAS Guaranteed  Green Device Available  Super Low Gate Charge  Excellent CdV/dt effect decline  Advanced high cell density Trench technology FKD3018 N-Ch 30V Fast Switching MOSFETs Product Summary BVDSS 30V RDSON 3mΩ ID 155A Description The FKD3018 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most applications. The FKD3018 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. TO252 Pin Configuration Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1,6 Continuous Drain Current, VGS @ 10V1,6 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol RθJA RθJC Parameter Thermal R...