FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKH6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKH6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKH6115
P-Ch 60V Fast Switching.
P-Channel MOSFET
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKH6115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKH6115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKH6115
P-Ch 60V Fast Switching MOSFETs
Product Summary
BVDSS -60V
RDSON 25mΩ
ID -45A
TO263 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symb.