FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect ...
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKK3103 is the high cell density trenched P-ch
MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKK3103 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKK3103
P-Ch 30V Fast Switching
MOSFETs
Product Summary
BVDSS -30V
RDSON 32mΩ
ID -5.8A
SOT89 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-Ambie...