FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKK6008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKK6008 meet the RoHS and Green Product requirement with full function reliability approved.
FKK6008
N-Ch 60V Fast Switching MOSFETs
Product Summary
BVDSS .
N-Channel MOSFET
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKK6008 is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKK6008 meet the RoHS and Green Product requirement with full function reliability approved.
FKK6008
N-Ch 60V Fast Switching MOSFETs
Product Summary
BVDSS 60V
RDSON 100mΩ
ID 2.8A
SOT89 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1, Pulsed Drain Current2, Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-Ambient 1
Thermal Resistance Junction-Ca.