FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced hig...
FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
Description
The FKL0107 is the high cell density trenched P-ch
MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKL0107 meet the RoHS and Green Product requirement with full function reliability approved.
FKL0107
P-Ch 100V Fast Switching
MOSFETs
Product Summary
BVDSS -100V
RDSON 0.65Ω
ID -1.5A
SOT223 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient 1
Thermal Resistance Junction-Case1
R...