FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect ...
FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKL6107 is the high cell density trenched P-ch
MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKL6107 meets the RoHS and Green Product requirement with full function reliability approved.
FKL6107
P-Ch 60V Fast Switching
MOSFETs
Product Summary
BVDSS -60V
RDSON 180mΩ
ID -2.3A
SOT223 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-Ambient 1
Th...