FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKN2611
P-Ch 20V Fast Switching MOSFETs
Product Summary
BVDSS -20V
RDSON 45mΩ
ID -4.9A
Description
SOT 23 Pin Configurations
The FKN2611 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKN2611 meet the RoHS and Green Product requirem.
P-Channel MOSFET
FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKN2611
P-Ch 20V Fast Switching MOSFETs
Product Summary
BVDSS -20V
RDSON 45mΩ
ID -4.9A
Description
SOT 23 Pin Configurations
The FKN2611 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKN2611 meet the RoHS and Green Product requirement with full function reliability approved.
Absolute Maximum Ratings
Symbol
VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJA
Parameter Thermal Resistance Junction-Ambient.