FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced hig...
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKN3107
P-Ch 30V Fast Switching
MOSFETs
Product Summary
BVDSS -30V
RDSON 70mΩ
ID -3.2A
Description
The FKN3107 is the high cell density trenched P-ch
MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKN3107 meet the RoHS and Green Product requirement with full function reliability approved.
SOT23 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃ PD@TA=70℃
TSTG TJ
Thermal Data
Symbol RθJA RθJA RθJC
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Parameter Thermal Resistance Juncti...
