FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced hig...
FETek Technology Corp.
Super Low Gate Charge Green Device Available Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
FKP18N20
N-Ch 200V Fast Switching
MOSFETs
Product Summary
BVDSS 200V
RDSON 170mΩ
ID 18A
Description
TO220 Pin Configuration
The FKP18N20 is the highest performance trench N-ch
MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKP18N20 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal ...