FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect ...
FETek Technology Corp.
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKP3105
P-Ch 30V Fast Switching
MOSFETs
Product Summary
BVDSS -30V
RDSON 14mΩ
ID -60A
Description
The FKP3105 is the high cell density trenched P-ch
MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKP3105 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
TO220 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total P...