FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced hig...
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench
technology
Description
The FKQ3002 is the high cell density trenched N-ch
MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKQ3002 meet the RoHS and Green Product requirement with full function reliability approved.
FKQ3002
N-Ch 30V Fast Switching
MOSFETs
Product Summary
BVDSS 30V
RDSON 28mΩ
TSOP6 Pin Configuration
ID 5A
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient1
Thermal Resistance Junction-Case1
R...