FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect ...
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKR3016 is the high cell density trenched N-ch
MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKR3016 meet the RoHS and Green Product requirement 100% EAS guaranteed with full function reliability approved.
FKR3016
N-Ch 30V Fast Switching
MOSFETs
Product Summary
BVDSS 30V
RDSON 4mΩ
ID 93A
TO251 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃
IDM EAS IAS PD@TC=25℃ TSTG
TJ
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol RθJA...