FETek Technology Corp.
FKS6040
N-Ch 60V Fast Switching MOSFETs
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Product Summary
BVDSS 60V
RDSON 6.5mΩ
ID 18A
Description
SOP8 Pin Configuration
The FKS6040 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKS6040 meet the RoHS and Gre.
N-Channel MOSFET
FETek Technology Corp.
FKS6040
N-Ch 60V Fast Switching MOSFETs
Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Product Summary
BVDSS 60V
RDSON 6.5mΩ
ID 18A
Description
SOP8 Pin Configuration
The FKS6040 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKS6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=100℃
IDM EAS IAS PD@TA=25℃ TSTG
TJ
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbo.