FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect ...
FETek Technology Corp.
100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
Description
The FKS6204 is the high cell density trenched N-ch
MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKS6204 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
FKS6204
Dual N-Ch 60V Fast Switching
MOSFETs
Product Summary
BVDSS 60V
RDSON 32mΩ
ID 4.8A
Dual SOP8 Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TA=25℃ TSTG
TJ
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range
Thermal Data
S...