FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKUC3107
P-Ch 30V Fast Switching MOSFETs
Product Summary
BVDSS -30V
RDSON 70mΩ
ID -3.2A
Description
The FKUC3107 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKUC3107 meet the RoHS and Green Product requirement with full .
P-Channel MOSFET
FETek Technology Corp.
Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench
technology
FKUC3107
P-Ch 30V Fast Switching MOSFETs
Product Summary
BVDSS -30V
RDSON 70mΩ
ID -3.2A
Description
The FKUC3107 is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The FKUC3107 meet the RoHS and Green Product requirement with full function reliability approved.
SOT23S Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃ PD@TA=70℃
TSTG TJ
Thermal Data
Symbol RθJA RθJA RθJC
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range
Parameter Thermal Resistance Ju.