FEATURES
• High Output Power: P1dB = 28.8dBm (Typ.) • High Gain: G1dB = 8.5dB(Typ.) • High PAE: ηadd = 35%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package
FLC097WF
C-Band Power GaAs FET
DESCRIPTION
The FLC097WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM .
C-Band Power GaAs FET
FEATURES
• High Output Power: P1dB = 28.8dBm (Typ.) • High Gain: G1dB = 8.5dB(Typ.) • High PAE: ηadd = 35%(Typ.) • Proven Reliability • Hermetic Metal/Ceramic Package
FLC097WF
C-Band Power GaAs FET
DESCRIPTION
The FLC097WF is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency.
Eudyna stringent Quality Assurance Program assures the highest reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Total Power Dissipation
PT Tc = 25°C
Storage Temperature
Tstg
Channel Temperature
Tch
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed +10 volts. 2. The forward and reverse gate currents should not exceed 4.8 and -0.5 mA respectively with
gate resistance of 400Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.
Rating
+15 -5 4.16 -65 to +175 175
Unit
V V W °C °C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Symbol
Test Conditions
Min.
Saturated Drain Current Transconductance
IDSS gm
VDS = 5V, VGS = 0V VDS = 5V, IDS = 200mA
-
Pinch-off Voltage
Vp
Gate Source Breakdown Voltage VGSO
VDS = 5V, IDS =15mA IGS = -15µA
-1.0 -5
Limit Typ. Max. 300 450 150 -
-2.0 -3.5
--
Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P.
P1dB .