FEATURES
• Push-Pull Configuration • High Power Output: 80W • High PAE: 45%. • Excellent Linearity • Suitable for class ...
FEATURES
Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package
FLL810IQ-4C
L-Band High Power GaAs FET
DESCRIPTION
The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design which offers excellent linearity, ease of matching, and greater consistency in covering the frequency band of 3.5 to 3.7 GHz. This new product is uniquely suited for use in WLL applications as it offers high gain, long term reliability and ease of use.
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta=25°C)
Item
Symbol
Condition
Rating
Drain-Source
Voltage Gate-Source
Voltage Total Power Dissipation Storage Temperature Channel Temperature
VDS VGS PT Tstg Tch
Tc = 25°C
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating
voltage (VDS) should not exceed 12 volts. 2. The forward and reverse gate currents should not exceed 176 and -51.8 mA respectively with
gate resistance of 5Ω. 3. The operating channel temperature (Tch) should not exceed 145°C.
15 -5 136 -65 to +175 +175
Unit
V V W °C °C
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25°C)
Item
Symbol
Conditions
Drain Current
IDSS
VDS = 5V, VGS = 0V
Limits Min. Typ. Max.
-8-
Pinch-Off
Voltage
Vp VDS = 5V, IDS = 220mA -0.1 -0.3 -0.5
Gate-Source Breakdown
Voltage VGSO IGS = -2.2mA
-5 -
-
Output Power Linear Gain (Note 1) Power-Added Efficiency Drain Current
Pout...