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FLM7785-45F Datasheet

Part Number FLM7785-45F
Manufacturers SUMITOMO
Logo SUMITOMO
Description C-Band Internally Matched FET
Datasheet FLM7785-45F DatasheetFLM7785-45F Datasheet (PDF)

FLM7785-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=32.5%(Typ.) ・Broad Band: 7.7~8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM7785-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25OC) Item Drain-Source Voltage Gate-Source Voltage Total Po.

  FLM7785-45F   FLM7785-45F






C-Band Internally Matched FET

FLM7785-45F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=46.5dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=32.5%(Typ.) ・Broad Band: 7.7~8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION The FLM7785-45F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50Ω system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25OC) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 115 -65 to +175 175 Unit V V W O C C O RECOMMENDED OPERATING COMDITION (Case Temperature Tc=25OC) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=10Ω RG=10Ω Condition Limit Unit V mA mA ≤10 ≤52 ≥-23.2 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25OC) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G Rth ∆Tch Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=8.0A VDS=5V, IDS=960mA IGS=-960uA VDS=10V f=7.7 - 8.5 GHz IDS(DC)=8.0A(typ.) Zs=ZL=50Ω Min. -0.5 -5.0 46.0 6.0 - Limit Typ. 24 16 -1.5 46.5 7.0 11  32.5 1.1 - Max. -3.0 13 1.6 1.3 100 Unit A S V V dBm dB A % dB O Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise Channel to Case 10V x Ids(DC) x Rth C/W O C CASE STYL.


2014-07-14 : C6144    UTC78L05    UTC78L06    UTC78L08    UTC78L09    UTC78L12    UTC78L15    UTC78L18    UTC78L24    UTC78L05M   


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