FLM8596-4F

FLM8596-4F X, Ku-Band Internally Matched FET FEATURES High Output Power: P1dB = 36.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: ηadd = 29% (Typ.) Low IM3 = -45dBc@Po = 25.5dBm Broad Band: 8.5 ~ 9.6GHz Impedance Matched Zin/Zout = 50Ω Hermetically Sealed DESCRIPTION The FLM8596-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Tc = 25°C Condition Rating 15 -5 25.0 -65 to +175 175 Unit V V W °C °C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C) Item Saturated Drain Current Transconductance Pinch-off Voltage Gate Source Breakdown Voltage Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Drain Current Power-added Efficiency Gain Flatness 3rd Order Intermodulation Distortion Thermal Resistance Channel Temperature Rise CASE STYLE: IA Symbol IDSS gm Vp VGSO P1dB G1dB Idsr ηadd ∆G IM3 Rth ∆Tch f = 9.6 GHz, ∆f = 10 MHz 2-Tone Test Pout = 25.5dBm S.C.L. Channel to Case 10V x Idsr x Rth VDS =10V, IDS = 0.65 IDSS (Typ.), f = 8.5 ~ 9.6 GHz, ZS=ZL= 50 ohm Test Conditions VDS = 5V, VGS = 0V VDS = 5V, IDS =1100mA VDS = 5V, IDS = 85mA IGS = -85µA Min. -0.5 -5.0 35.5 6.5 -42 Limit Ty...