FM16W08

FM16W08 64-Kbit (8 K × 8) Wide Voltage Bytewide F-RAM Memory 64-Kbit (8 K × 8) Wide Voltage Bytewide F-RAM Memory Features ■ 64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ SRAM and EEPROM compatible ❐ Industry-standard 8 K × 8 SRAM and EEPROM pinout ❐ 70-ns access time, 130-ns cycle time ■ Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface mount solution, no rework steps ❐ Superior for moisture, shock, and vibration ❐ Resistant to negative voltage undershoots ■ Low power consumption ❐ Active current 12 mA (max) ❐ Standby current 20 A (typ) ■ Wide voltage operation: VDD = 2.7 V to 5.5 V ■ Industrial temperature: –40 C to +85 C ■ 28-pin small outline integrat...