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FM22L16

Cypress Semiconductor

4-Mbit (256K x 16) F-RAM Memory

FM22L16 4-Mbit (256K × 16) F-RAM Memory 4-Mbit (256K × 16) F-RAM Memory Features ■ 4-Mbit ferroelectric random access m...


Cypress Semiconductor

FM22L16

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Description
FM22L16 4-Mbit (256K × 16) F-RAM Memory 4-Mbit (256K × 16) F-RAM Memory Features ■ 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 256K × 16 ❐ Configurable as 512K × 8 using UB and LB ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page mode operation to 25-ns cycle time ❐ Advanced high-reliability ferroelectric process ■ SRAM compatible ❐ Industry-standard 256K × 16 SRAM pinout ❐ 55-ns access time, 110-ns cycle time ■ Advanced features ❐ Software-programmable block write-protect ■ Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface mount solution, no rework steps ❐ Superior for moisture, shock, and vibration ■ Low power consumption ❐ Active current 8 mA (typ) ❐ Standby current 90 A (typ) ❐ Sleep mode current 5 A (max) ■ Low-voltage operation: VDD = 2.7 V to 3.6 V ...




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