FM24C04B

FM24C04B 4-Kbit (512 × 8) Serial (I2C) F-RAM 4-Kbit (512 × 8) Serial (I2C) F-RAM Features ■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (See Data Retention and Endurance on page 10) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Fast 2-wire Serial interface (I2C) ❐ Up to 1-MHz frequency ❐ Direct hardware replacement for serial (I2C) EEPROM ❐ Supports legacy timings for 100 kHz and 400 kHz ■ Low power consumption ❐ 100 A active current at 100 kHz ❐ 4 A (typ) standby current ■ Voltage operation: VDD = 4.5 V to 5.5 V ■ AEC-Q100 grade 3 qualified ■ Industrial temperature: –40 C to +85 C ■ 8-pin small outline integrated circuit (SOIC) package ■ Restriction of hazardous substances (RoHS) compliant Functional Description The FM24C04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24C04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need ...