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FM28V100 Datasheet

Part Number FM28V100
Manufacturers Cypress Semiconductor
Logo Cypress Semiconductor
Description 1-Mbit (128 K x 8) F-RAM Memory
Datasheet FM28V100 DatasheetFM28V100 Datasheet (PDF)

FM28V100 1-Mbit (128 K × 8) F-RAM Memory 1-Mbit (128 K × 8) F-RAM Memory Features ■ 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page mode operation to 30 ns cycle time ❐ Advanced high-reliability ferroelectric process ■ SRAM compatible ❐ Industry-standard 128 K × 8 SRAM pinout ❐ 60-ns access time, 90-ns cycle time ■ Su.

  FM28V100   FM28V100






Part Number FM28V100
Manufacturers Ramtron
Logo Ramtron
Description 1Mbit Bytewide F-RAM Memory
Datasheet FM28V100 DatasheetFM28V100 Datasheet (PDF)

www.DataSheet.co.kr Preliminary FM28V100 1Mbit Bytewide F-RAM Memory Features 1Mbit Ferroelectric Nonvolatile RAM • Organized as 128Kx8 • High Endurance 100 Trillion (1014) Read/Writes • NoDelay™ Writes • Page Mode Operation to 33MHz • Advanced High-Reliability Ferroelectric Process Superior to Battery-backed SRAM Modules • No battery concerns • Monolithic reliability • True surface mount solution, no rework steps • Superior for moisture, shock, and vibration SRAM Replacement • JEDEC 128Kx8 SR.

  FM28V100   FM28V100







1-Mbit (128 K x 8) F-RAM Memory

FM28V100 1-Mbit (128 K × 8) F-RAM Memory 1-Mbit (128 K × 8) F-RAM Memory Features ■ 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128 K × 8 ❐ High-endurance 100 trillion (1014) read/writes ❐ 151-year data retention (see the Data Retention and Endurance table) ❐ NoDelay™ writes ❐ Page mode operation to 30 ns cycle time ❐ Advanced high-reliability ferroelectric process ■ SRAM compatible ❐ Industry-standard 128 K × 8 SRAM pinout ❐ 60-ns access time, 90-ns cycle time ■ Superior to battery-backed SRAM modules ❐ No battery concerns ❐ Monolithic reliability ❐ True surface mount solution, no rework steps ❐ Superior for moisture, shock, and vibration ■ Low power consumption ❐ Active current 7 mA (typ) ❐ Standby current 90 A (typ) ■ Low-voltage operation: VDD = 2.0 V to 3.6 V ■ Industrial temperature: –40 C to +85 C Logic Block Diagram ■ 32-pin thin small outline package (TSOP) Type I ■ Restriction of hazardo.


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