isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
FMP20N60S1
·FEATURES ·With TO-220 packaging ·Low switching loss...
isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
FMP20N60S1
·FEATURES ·With TO-220 packaging ·Low switching loss ·Low on-state resistance ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operationz
·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
600
VGSS ID IDM
Gate-Source
Voltage
Drain Current-Continuous@Tc=25℃ Tc=100℃
Drain Current-Single Pulsed
±30
20 12.6
60
PD
Total Dissipation
150
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 0.83 62.5
UNIT ℃/W ℃/W
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isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
FMP20N60S1
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 0.25mA
600
V
VGS(th)
Gate Threshold
Voltage
VDS=±30V; ID=0.25mA
2.5
3.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=10A
161 190
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward
voltage
VGS= ±30V;VDS= 0V
VDS= 600V; VGS= 0V;Tc=25℃ VDS= 480V; VGS= 0V;Tc=125℃
ISD=20A, VGS = 0 V
...