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FMP20N60S1 MOSFET Datasheet PDF

N-CHANNEL SILICON POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

 

 

 

Part Number FMP20N60S1
Description N-CHANNEL SILICON POWER MOSFET
Feature FMP20N60S1 Super J-MOS series http://ww w.
fujielectric.
com/products/semiconduct or/ FUJI POWER MOSFET N-Channel enhance ment mode power MOSFET Features Pb-fre e lead terminal RoHS compliant Applicat ions For switching Outline Drawings [m m] TO-220 П3.
6± 0.
2 10 +0.
5 0 4.
5 ±0.
2 1.
3±0.
2 2.
7 ±0.
1 6.
4 ±0.
2 15 ± 0.
2 3.
6 ±0.
2 13.
5 min.
1.
2 ± 0.
2 1 2.
54 ± 0.
2 23 0.
8 +0.
2 -0.
1 2.
54± 0.
2 PRE-SOLDER 0.
4 +0.
2 0 2.
7 0.
2 1 23 CONNECTION 1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-220AB DIMENSIONS AR E IN MILLIMETERS.
Maximum Ratings and Characteristics Absolute Maximum Ratin gs at TC=25°C (unless othe .
Manufacture Fuji Electric
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FMP20N60S1

 

 

 


 

 

 

Part Number FMP20N60S1
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor INCHANG E Semiconductor FMP20N60S1 ·FEATURES ·With TO-220 packaging ·Low switching loss ·Low on-state resistance ·Easy to use ·100% avalanche tested ·Minimu m Lot-to-Lot variations for robust devi ce performance and reliable operationz ·APPLICATIONS ·Switching application s ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATING S(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS I D IDM Gate-Source Voltage Drain Curren t-Continuous@Tc=25℃ Tc=100℃ Drain C urrent-Single Pulsed ±30 20 12.
6 60 PD Total Dissipation 150 Tj O .
Manufacture INCHANGE
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