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FMP20N60S1 MOSFET Datasheet PDFN-CHANNEL SILICON POWER MOSFET N-CHANNEL SILICON POWER MOSFET |
　
　
　
| Part Number | FMP20N60S1 |
|---|---|
| Description | N-CHANNEL SILICON POWER MOSFET |
| Feature | FMP20N60S1
Super J-MOS series
http://ww w. fujielectric. com/products/semiconduct or/ FUJI POWER MOSFET N-Channel enhance ment mode power MOSFET Features Pb-fre e lead terminal RoHS compliant Applicat ions For switching Outline Drawings [m m] TO-220 П3. 6± 0. 2 10 +0. 5 0 4. 5 ±0. 2 1. 3±0. 2 2. 7 ±0. 1 6. 4 ±0. 2 15 ± 0. 2 3. 6 ±0. 2 13. 5 min. 1. 2 ± 0. 2 1 2. 54 ± 0. 2 23 0. 8 +0. 2 -0. 1 2. 54± 0. 2 PRE-SOLDER 0. 4 +0. 2 0 2. 7 ±0. 2 1 23 CONNECTION 1 GATE 2 DRAIN 3 SOURCE JEDEC : TO-220AB DIMENSIONS AR E IN MILLIMETERS. Maximum Ratings and Characteristics Absolute Maximum Ratin gs at TC=25°C (unless othe . |
| Manufacture | Fuji Electric |
| Datasheet |
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| Part Number | FMP20N60S1 |
|---|---|
| Description | N-Channel MOSFET |
| Feature | isc N-Channel MOSFET Transistor
INCHANG E Semiconductor
FMP20N60S1
·FEATURES ·With TO-220 packaging ·Low switching loss ·Low on-state resistance ·Easy to use ·100% avalanche tested ·Minimu m Lot-to-Lot variations for robust devi ce
performance and reliable operationz
·APPLICATIONS ·Switching application s ·DC-DC converters ·Uninterruptible power supply
·ABSOLUTE MAXIMUM RATING S(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS I D IDM
Gate-Source Voltage
Drain Curren t-Continuous@Tc=25℃ Tc=100℃
Drain C urrent-Single Pulsed
±30
20 12. 6 60 PD Total Dissipation 150 Tj O . |
| Manufacture | INCHANGE |
| Datasheet |
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