www.DataSheet.co.kr
FMV06N60ES
Super FAP-E3S series
Features
Maintains both low power loss and low noise Lower RDS (on)...
www.DataSheet.co.kr
FMV06N60ES
Super FAP-E3S series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold
voltage (3.7±0.5V) High avalanche durability
FUJI POWER
MOSFET
N-CHANNEL SILICON POWER
MOSFET
Outline Drawings [mm]
TO-220F (SLS)
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Gate(G) Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Drain-Source
Voltage Continuous Drain Current Pulsed Drain Current Gate-Source
Voltage Repetitive and Non-Repetitive Maximum Avalanche Current Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Isolation
Voltage Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg VISO Characteristics 600 600 ±6 ±24 ±30 6 313.7 3.7 3.8 100 2.16 37 150 -55 to +150 2 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C kVrms Remarks VGS = -30V
Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C
t = 60sec, f = 60Hz
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description Drain-Source Breakdown
Voltage Gate Threshold
Voltage Zero Gate
Voltage Drain Current Gate-Source Leakage Curre...