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FMV11N90E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) c...
www.DataSheet.co.kr
FMV11N90E
Super FAP-E3 series
Features
Maintains both low power loss and low noise Lower RDS (on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold
voltage (4.0±0.5V) High avalanche durability
FUJI POWER
MOSFET
N-CHANNEL SILICON POWER
MOSFET
Outline Drawings [mm]
TO-220F(SLS)
Equivalent circuit schematic
Drain(D)
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Gate(G) Source(S)
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description Drain-Source
Voltage Continuous Drain Current Pulsed Drain Current Gate-Source
Voltage Repetitive and Non-Repetitive Maximum AvalancheCurrent Non-Repetitive Maximum Avalanche Energy Repetitive Maximum Avalanche Energy Peak Diode Recovery dV/dt Peak Diode Recovery -di/dt Maximum Power Dissipation Operating and Storage Temperature range Symbol VDS VDSX ID I DP VGS I AR E AS E AR dV/dt -di/dt PD Tch Tstg Characteristics 900 900 ±11 ±44 ±30 11 811.9 12 2.2 100 2.16 120 150 -55 to + 150 Unit V V A A V A mJ mJ kV/µs A/µs W °C °C Remarks VGS = -30V
Note*1 Note*2 Note*3 Note*4 Note*5 Ta=25°C Tc=25°C
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description Drain-Source Breakdown
Voltage Gate Threshold
Voltage Zero Gate
Voltage Drain Current Gate-Source Leakage Current Drain-Source On-State Resistance Forward Transcond...