n-channel JFETs
designed for • • •
• Ultra-High Input Impedance Amplifiers
Electrometers pH Meters Smoke Detectors Intru...
n-channel JFETs
designed for
Ultra-High Input Impedance
Amplifiers
Electrometers pH Meters Smoke Detectors Intrusion Alarms
H
Siliconix
Performance Curves NT See Section 4
BENEFITS Low Power
Voltage (Note 1) ....... -40 V Gate-Current ............................... 50mA Total Device Dissipation
(Derate 2 mWrC to 175°C) ................ 300mW Storage Temperature Range ............ _. -65 to +175°C Lead Temperature
(1/16" from case for 10 seconds). " ........... 255°C
TO-72 See Section 6
"4:
~G ~ 0
s
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
1
::2 S
-3 T -4 A
T
-5 -6
I C
7
-8 D y
9N
-
A M
10 I
-c
11
IGSS
IGSS BVGSS VGS(off) IDSS gls gas Ciss Crss
Gate Reverse Current 2N4117 Senes Only FN4117
Gate Reverse Current 2N4117A Series Only FN4117A
Gate-5ource Breakdown Voltage
Gate·Source Cutoff Voltage
Saturation Dram Current
(Note 2)
FN4117A
Common-Source Forward Transconductance (Note 2)
Common-Source Output Conductance
Common-Source Input Capabltance
Common-Source Reverse Transfer Capacitance
2N4117/A FN4117/A Min Max
-10 -25
-1 -2.5 -40 -0.6 -1.8 0.03 0.09 0.015 70 210
3
3
1.5
2N4118 2N4118A Min Max
-10
-25 -1
-2.5
-40 -1 -3
2N4119 2N4119A Min Max
-10 -25
-1 -25 -40 -2 -6
Unit
pA nA pA nA
V
Test Conditions
VGS = -20 V. VDS = 0
VGS = -20 V. VDS = 0 IG=-lI'A.VDS=O VDS = 10...
