MOSFET. FNK02N08E Datasheet

FNK02N08E Datasheet PDF

Part FNK02N08E
Description N-Channel Power MOSFET
Feature 20V N-Channel MOSFET General Description The FNK02N08E uses advanced trench technology to provide ex.
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20V N-Channel MOSFET General Description The FNK02N08E uses FNK02N08E Datasheet




FNK02N08E
20V N-Channel MOSFET
General Description
The FNK02N08E uses advanced trench technology to
provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 0.5V while
retaining a 12V VGS(MAX) rating.This device is suitable
for use as load switch and general purpose FET
application.
Product Summary
VDS (V) = 20V
ID = 20A
RDS(ON) < 7.5m(VGS = 4.5V)
RDS(ON) < 12m(VGS = 2.5V)
18
27
36
45
Top View
FNK02N08E
D
G
S
V2#W$(3ÿ2(Uÿ%$(ÿQ!!$3(T4(&ÿ
Package Marking And Ordering Information
Device Marking
Device
Device Package
FNK02N08E
FNK02N08E
DFN3.3x3.3
Reel Size
Ø330mm
Tape width
12mm
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
20
±12
100
92
400
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
30
65
20
Max
40
80
25
Quantity
5000 units
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
FNK-Semiconductor
1/6
May.2017.Rev.1.0



FNK02N08E
Electrical Characteristics (TJ=25°C unless otherwise noted)
FNK02N08E
Symbol
Parameter
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS
BVGSO
VGS(th)
ID(ON)
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
RDS(ON) Static Drain-Source On-Resistance
Conditions
Min
ID=250µA, VGS=0V
VDS=16V, VGS=0V
VDS=0V, VGS=±10V
VDS=0V, IG=±250uA
VDS=VGS ID=250µA
VGS=4.5V, VDS=5V
VGS=4.5V, ID=15A
TJ=55°C
TJ=125°C
20
±12
0.45
100
VGS=2.5V, ID=10A
gFS Forward Transconductance
VSD Diode Forward Voltage
VDS=5V, ID=12A
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
VGS=0V, VDS=10V, f=1MHz
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=4.5V, VDS=10V, ID=12A
Qgd Gate Drain Charge
tD(on)
tr
tD(off)
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=10V, RL=1.0,
RGEN=3
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=12A, dI/dt=100A/µs
Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
Typ
0.7
4.3
7.8
5.1
37
0.73
1810
232
200
1.6
17.9
1.5
4.7
2.5
7.2
49
10.8
20.2
8
Max
10
25
10
1
7.5
12
12
1
4.8
Units
V
µA
µA
V
V
A
m
m
S
V
A
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
FNK-Semiconductor
2/6
May.2017.Rev.1.0




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