FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK03N02D uses advanced trench technology and design to prov...
FNK N-Channel Enhancement Mode Power
MOSFET
Description
The FNK03N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =140A RDS(ON) <3.5 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
FNK03N02D
Schematic diagram To-263 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK03N02D
FNK03N02D
TO-263-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Sour...