FNK03N02E

FNK03N02E FNK N-Channel Enhancement Mode Power MOSFET Description The FNK03N02E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =140A RDS(ON) <3.0 mΩ @ VGS=10V RDS(ON) <4.0mΩ @ VGS=4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Schematic diagram Top View DFN5X6 Bottom View Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply PIN1 Package Marking and Ordering Information Device Marking Device Device Package FNK03N02E FNK03N02E DFN5x6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source ...