FNK N-Channel Power MOSFET
FNK1404
Description The FNK1404 uses advanced trench technology and design to provide excel...
FNK N-Channel Power
MOSFET
FNK1404
Description The FNK1404 uses advanced trench technology and design to provide excellent Rds(on) with low gate charge. It can be used in a wide variety of applications.
General Features ● VDS =45V ,ID =205A
Rds(on) <4mΩ @ Vgs=10V (Typ:2.8mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● E-Tools ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Package Marking and Ordering Information
Device Marking
Device Package
FNK1404
TO-220
Form Tube
Absolute Maximum Ratings
Symbol
Parameter
Vds Drain-Source
Voltage
Vgs Gate-Source
Voltage
Id (25℃)
Drain Current-Continuous (Tc = 25℃)
Id (100℃)
Drain Current-Continuous (Tc = 100℃)
Idm Pulsed Drain Current ...