N-Channel Enhancement Mode Power MOSFET
Description
The FNK2012E uses advanced trench technology to provide excellent RD...
N-Channel Enhancement Mode Power
MOSFET
Description
The FNK2012E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Features
● VDS = 20V,ID =8A R DS(ON) < 17mΩ @ VGS=2.5V R DS(ON) < 13mΩ @ VGS=4.5V ESD Rating: 2000V HBM
● High power and current handing capability ● Lead free product is acquired ● Surface mount package
Application
● Uni-directional load switch ● Bi-directional load switch
FNK2012E
Schematic diagram TSSOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK2012E
FNK2012E
TSSOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 3000 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Continuous Drain Current-Pulsed (Note 1)
ID IDM
Maximu...