MOSFET. FNK22001A Datasheet

FNK22001A Datasheet PDF


Part FNK22001A
Description N-Channel Power MOSFET
Feature FNK22001A FNK N-Channel Enhancement Mode Power MOSFET Description The FNK22001A uses advanced trenc.
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FNK22001A FNK N-Channel Enhancement Mode Power MOSFET Descr FNK22001A Datasheet
FNK22001AF FNK N-Channel Enhancement Mode Power MOSFET Desc FNK22001AF Datasheet




FNK22001A
FNK22001A
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK22001A uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
VDS =85V,ID =210A
RDS(ON) <4.1m@ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
Schematic diagram
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
To-220 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK22001A FNK22001A
TO-220
Reel Size
-
Tape width
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100)
ID (100)
Pulsed Drain Current
Maximum Power Dissipation
IDM
PD
Derating factor
Single pulse avalanche energy (Note 5)
EAS
Limit
85
±20
210
113
840
285
1.9
780
Quantity
-
Unit
V
V
A
A
A
W
W/
mJ
FNK-Semiconductor
1/7
Nov.2016.Rev.1.0



FNK22001A
Operating Junction and Storage Temperature Range
TJ,TSTG
FNK22001A
-55 To 175
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
0.53 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=80V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=20A
VDS=5V,ID=20A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=25V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=40V,ID=2A,RL=15
VGS=10V,RG=2.5
VDS=40V,ID=20A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=40A
IS
trr TJ = 25°C, IF = 20A
Qrr di/dt = 500A/μs(Note3)
Min Typ Max
85 88
-
--
1
- - ±100
23
- 3.2
60 -
4
4.1
-
- 10660
- 810
- 710
-
-
-
- 31.5
- 33
- 46
- 17.5
- 130
- 36
- 46
-
-
-
-
- 1.2
- - 160
- 51
-
- 61
-
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=40V,VG=10V,L=0.5mH,Rg=25
FNK-Semiconductor
2/7
Nov.2016.Rev.1.0




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