FNK2310

FNK2310 FNK N-Channel Enhancement Mode Power MOSFET Description The FNK2310 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 5A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 28mΩ @ VGS=4.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D G S Schematic diagram Application ●Battery protection ●Load switch ●Power management SOT-23 top view Marking and pin assignment Package Marking and Ordering Information Device Marking Device Device Package FNK2310 FNK2310 SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Drain Current-Pulsed (Note 1) IDM ...