FNK3075PD

FNK P-Channel Enhancement Mode Power MOSFET Description The FNK3075PC/D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V,I =-75A R DS(ON) < 6.9mΩ @ VGS=-10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Battery and loading switching TO-251 top view FNK3075PC/D TO-252-2L top view Package Marking and Ordering Information Device Marking Device Device Package FNK3075PC FNK3075PC TO-251 FNK3075PD FNK3075PD TO-252 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous ID Pulsed Drain Current ...