FNK30H160
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK30H160 uses advanced trench technology and des...
FNK30H160
FNK N-Channel Enhancement Mode Power
MOSFET
Description
The FNK30H160 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =30V,ID =160A RDS(ON) <2.4 mΩ @ VGS=10V RDS(ON) <3.5mΩ @ VGS=4.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
To-220 Top View
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK30H160
FNK30H160
TO-220
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Sou...