FNK4040PD
FNK P-Channel Enhancement Mode Power MOSFET
Description
The FNK4040PD uses advanced trench technology and des...
FNK4040PD
FNK P-Channel Enhancement Mode Power
MOSFET
Description
The FNK4040PD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
General Features
● VDS =-40V,ID =-40A RDS(ON) <14mΩ @ VGS=-10V
● High density cell design for ultra low Rdson ● Fully characterized avalanche
voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin assignment
TO-252-2L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK4040PD
FNK4040PD
TO-252-2L
Reel Size -
Tape width -
Quantity -
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Drain Current-Cont...