FNK4435

FNK4435 FNK P-Channel Enhancement Mode Power MOSFET Description The FNK4435 use s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. General Features ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● Battery Switch ● Load switch ● Power management Marking and pin assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package 4435 FNK4435 SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC =25℃ Continuous Drain Current (TJ =150℃) TC =70℃ TA =25℃ ID Drain Current-Pulsed (Note 1) TA =70℃ Maximum Power Dissipation Operating Junc...