30V Dual P-Channel MOSFET
General Description
The FNK4805 combines advanced trench MOSFET technology with a low resist...
30V Dual P-Channel
MOSFET
General Description
The FNK4805 combines advanced trench
MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at V =-4.5V)
-30V -7.5A < 23mΩ < 35mΩ
Top View
S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1
FNK4805
D1 D2
G1 G2 S1 S2
Top View
SOP-8 Bottom View
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage
VGS
Continuous Drain
TA=25°C
Current
TA=70°C
Pulsed Drain Current C
Avalanche Current C
Avalanche energy L=0.1mH C
ID
IDM IAS, IAR EAS, EAR
TA=25°C Power Dissipation B TA=70°C
PD
Junction and Storage Temperature Range
TJ, TSTG
Maximum -30 ±20 -7.5 -5 -50 33 54 2 1.3
-55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
Maximum Juncti...
