FNK60H10
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK60H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Feature
● VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V
(Typ:5.7mΩ)
Schematic diagram
● Special process technology for high ESD...
