FNK60N60

FNK60N60 FNK N-Channel Enhancement Mode Power MOSFET Description TheFNK60N60 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =60A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.0m Ω) ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Application ● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply To-220 Top View Package Marking and Ordering Information Device Marking Device Device Package FNK60N60 FNK60N60 TO-220 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS ...