FNK N-Channel Enhancement Mode Power MOSFET
Description
TheFNK75N08BD uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK75N08BD
General Features
● VDS =80V,ID =110A RDS(ON) < 7mΩ @ VGS=10V
(Typ:5.7mΩ)
● High density cell design for ultra low Rdson ● Fully cha...
