N and P-Channel Enhancement Mode Power MOSFET
Description
The FNK8310 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
FNK8310
General Features
● N-Channel VDS = 30V,ID =6.5A RDS(ON) < 32mΩ @ VGS=10V
● P-Ch...
