FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK8819B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK8819B
General Features
● VDS =20V,ID =7A RDS(ON) < 20mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current
Schematic diagram
Application
● Power switching application ● Hard switched and high fre.
N-Channel Power MOSFET
FNK N-Channel Enhancement Mode Power MOSFET
Description
The FNK8819B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK8819B
General Features
● VDS =20V,ID =7A RDS(ON) < 20mΩ @ VGS=4.5V RDS(ON) < 28mΩ @ VGS=2.5V
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current
Schematic diagram
Application
● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply
Marking and pin Assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
FNK8819B
FNK8819B
SOP-8
Reel Size Ø330mm
Tape width 12mm
Quantity 2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
ID
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Cu.