FOD817A

4-Pin DIP Phototransistor Optocouplers FOD814, FOD817 Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4−pin dual in−line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4−pin dual in−line package. Features AC Input Response (FOD814) Current Transfer Ratio in Selected Groups ♦ FOD814: 20–300% ♦ FOD814A: 50–150% ♦ FOD817: 50–600% ♦ FOD817A: 80–160% ♦ FOD817B: 130–260% ♦ FOD817C: 200–400% ♦ FOD817D: 300–600% Minimum BVCEO of 70 V Guaranteed Safety and Regulatory Approvals ♦ UL1577, 5,000 VACRMS for 1 Minute ♦ DIN EN/IEC60747−5−5 This Device is Pb−Free Typical Applications FOD814 Series ♦ AC Line Monitor ♦ Unknown Polarity DC Sensor ♦ Telephone Line Interface FOD817 Series ♦ Power Supply Regulators ♦ Digital Logic Inputs ♦ Microprocessor Inputs DATA SHEET www.onsemi.com PDIP4 CASE 646CD CASE 646CA PDIP4 GW CASE 709AH MARKING DIAGRAM VXZZY $Y 81x V = VDE Mark X = One Digit Year Code ZZ = Two Digit Work Week Y = Assembly Package Code $Y = Logo 81x = Specific Device Code x = 4 or 7 ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. © Semiconductor Components Industries, LLC, 2006 1 August, 2021 − Rev. 7 Publication Order Number: FOD814/D FOD814, FOD817 FUNCTIONAL BLOCK DIAGRAM Anode, Cathode 1 4 Colle...