FQA32N20C — N-Channel QFET® MOSFET
FQA32N20C
N-Channel QFET® MOSFET
200 V, 32 A, 82 mΩ
May 2014
Description
This N-Ch...
FQA32N20C — N-Channel QFET®
MOSFET
FQA32N20C
N-Channel QFET®
MOSFET
200 V, 32 A, 82 mΩ
May 2014
Description
This N-Channel enhancement mode power
MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features
32 A, 200 V, RDS(on) = 82 mΩ (Max.) @ VGS = 10 V, ID = 16 A
Low Gate Charge (Typ. 82.5 nC) Low Crss (Typ. 185 pF)
100% Avalanche Tested
D
G DS
TO-3PN
G S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source
Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source
Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
Thermal Characteristics
Symbol RθJC RθCS RθJA
Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Case-to-Sink, Typ. Thermal Resistance, Junction-to-Ambient, Max.
FQA32N20C...