FQA9N90C-F109 — N-Channel QFET® MOSFET
FQA9N90C-F109
N-Channel QFET® MOSFET
900 V, 9 A, 1.4 Ω Features
• 9 A, 900 V, RD...
FQA9N90C-F109 — N-Channel QFET®
MOSFET
FQA9N90C-F109
N-Channel QFET®
MOSFET
900 V, 9 A, 1.4 Ω Features
9 A, 900 V, RDS(on) = 1.4 Ω (Max.) @ VGS = 10 V, ID = 4.5 A Low Gate Charge (Typ. 45 nC) Low Crss . 14 pF) 100% Avalanche Tested RoHS compliant
Description
This N-Channel enhancement mode power
MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
D
G DS
TO-3PN
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source
Voltage
Drain Current Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed
Gate-Source
Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
(Note 1)
(Note 2) (Note 1) (Note 1) (Note 3)
G
S
FQA9N90C-F109
900 9.0 5.7 36 ± 30 900 9.0 28 4.0 280 2.22 -55 to +150
300
Thermal Characteristics
Symbol
RθJC RθCS RθJA
Parameter
Thermal Resistance, Junction-to-Case, Max. Thermal Resista...